Solutions will be posted on Monday morning. Any questions regardingĮxam should be submitted via EPost. Wednesday at noon and due Friday 2/11 at noon. Midterm Exam: The midterm exam will be a take-home provided."Fundamentals of Modern VLSI Devices" by Yuan Taur and Tak Ning, 1998ĮE 482 (Semiconductor Devices) or equivalent "Fundamentals of Carrier Transport," by Mark Lundstrom, 2000. Extensive use of device simulation software. Control of electrical characteristics (threshold voltage,īreakdown voltage, on/off currents, current gain, switching speed) in High-speed devices including effects of scaling, interfaces, and highĭoping. In electrical engineering, computer engineering and physics interestedĬourse Description: Study of device phenomena in very small and Target Audience: Graduate students and advanced undergraduates Required along with a midterm, final and homeworks (which will also Simulation using commercial TCAD tools will be used extensively to What happens as these devices get smaller and faster. The focus of the course is on submicron MOS devices and Operation, emphasizing CMOS technology at the current state-of-the-artĪnd beyond. The course is aimed at understanding nanoscale semiconductor device Physics and Modeling of Nanoscale VLSI DevicesĮE 531 Semiconductor Devices & Device Simulation
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